Semiconductor device and manufacturing method thereof

ABSTRACT

To provide a structure and a manufacturing method for efficiently forming a transistor to which tensile strain is preferably applied and a transistor to which compressive strain is preferably applied over the same substrate when stress is applied to a semiconductor layer in order to improve mobility of the transistors in a semiconductor device. Plural kinds of transistors which are separated from a single-crystal semiconductor substrate and include single-crystal semiconductor layers bonded to a substrate having an insulating surface with a bonding layer interposed therebetween are provided over the same substrate. One of the transistors uses a single-crystal semiconductor layer as an active layer, to which tensile strain is applied. The other transistors use single-crystal semiconductor layers as active layers, to which compressive strain using part of heat shrink generated by heat treatment of the base substrate after bonding is applied.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device including a thinfilm transistor over an insulating surface and a manufacturing methodthereof.

2. Description of the Related Art

An integrated circuit has been developed, which uses a semiconductorsubstrate called a silicon-on-insulator (hereinafter also referred to asSOI) which has a thin single-crystal semiconductor layer over aninsulating surface, instead of a silicon wafer which is manufactured bythinly slicing an ingot of a single-crystal semiconductor. An integratedcircuit using an SOI substrate has attracted attention as a circuitwhich reduces parasitic capacitance between source and drain regions ofthe transistor and the substrate, and improves performance of theintegrated circuit.

As a method for manufacturing an SOI substrate, a hydrogen ionimplantation separation method is known (e.g., see Reference 1: JapanesePublished Patent Application No. 2000-124092). A hydrogen ionimplantation separation method is a method in which the surface of asilicon wafer is irradiated with hydrogen ions to form a weakened layerat a predetermined depth from the surface of the wafer, a thin siliconlayer (a semiconductor layer) which is thinner than the silicon wafer isseparated by heat treatment or the like with the weakened layer used asa separation plane (a cleavage plane), and the thin silicon layer (thesemiconductor layer) is attached and bonded to another silicon wafer.After an oxide film is formed over the surface of the semiconductorlayer by heat treatment in an oxidizing atmosphere, it is necessary toremove the oxide film as well as the weakened layer remaining on theseparation plane and then to perform heat treatment at 1000 to 1300° C.in a reducing atmosphere to increase bonding strength at an attachmentinterface.

Further, a semiconductor device in which a single-crystal semiconductorlayer is formed over an insulating substrate such as a highheat-resistant glass substrate is disclosed (e.g., see Reference 2:Japanese Published Patent Application No. H11-163363). The semiconductordevice has a structure in which the entire surface of the glasssubstrate is protected by an insulating silicon film and the thinsingle-crystal semiconductor layer obtained by the hydrogen ionimplantation separation method is firmly fixed over the insulatingsilicon film.

Meanwhile, when strain is applied to a semiconductor layer, mobility canbe considerably improved when a transistor is manufactured with thesemiconductor layer used as an active layer compared to the case where atransistor is manufactured with a normal semiconductor layer used as anactive layer (e.g., see Reference 3: IEDM Tech. Digest, 1994, pp. 373 to376 and Reference 4: IEEE ELECTRON DEVICE LETTERS, VOL. 15, No. 10,1994, pp. 402 to 405). For example, in an N-channel transistor, when asemiconductor layer to which tensile strain is applied is used as anactive layer, electron mobility can be considerably improved. On theother hand, in a P-channel transistor, when a semiconductor layer towhich compressive strain is applied is used as an active layer, holemobility can be considerably improved.

SUMMARY OF THE INVENTION

According to the disclosure in Reference 3 and Reference 4, as a methodfor applying tensile strain or compressive strain to a semiconductorlayer, a method in which silicon germanium layers having differentlattice constants are formed over a base film and a silicon layer isgrown thereover to apply tensile strain, a method in which compressivestrain of a silicon germanium layers are directly utilized, and the likehave been proposed. However, since a semiconductor layer havingfavorable crystallinity cannot be obtained when such a step is performedat a process temperature equal to or lower than a strain point of glassor the like, it has been difficult to employ the above-described processfor a display device or the like in which a substrate needslight-transmitting properties.

In view of the foregoing problems, the present invention provides asemiconductor device in which a semiconductor layer having favorablecrystallinity and having tensile strain or compressive strain isefficiently and surely formed over an insulating substrate formed usingglass, plastic, or the like, and a manufacturing method thereof.

In order to solve the foregoing problems, methods as described below aretaken in the present invention.

A semiconductor device of the present invention includes a first circuitgroup and a second circuit group provided over a base substrate havingan insulating surface.

The first circuit group includes a first transistor having a firstsingle-crystal semiconductor layer as an active layer. The secondcircuit group includes a second transistor having a secondsingle-crystal semiconductor layer as an active layer. A bonding layeris provided between each of the first single-crystal semiconductor layerand the second single-crystal semiconductor layer and the base substratehaving an insulating surface. The second single-crystal semiconductorlayer is a single-crystal silicon layer having compressive strain.

A semiconductor device of the present invention includes a first circuitgroup and a second circuit group provided over a base substrate havingan insulating surface. The first circuit group includes a firsttransistor having a first single-crystal semiconductor layer as anactive layer. The second circuit group includes a second transistorhaving a second single-crystal semiconductor layer as an active layer. Abonding layer is provided between each of the first single-crystalsemiconductor layer and the second single-crystal semiconductor layer isprovided and the base substrate having an insulating surface. The firstsingle-crystal semiconductor layer is a single-crystal silicon layerhaving tensile strain. The second single-crystal semiconductor layer isa single-crystal silicon layer having compressive strain.

In a semiconductor device of the present invention, it is preferablethat the first circuit group include at least one of a data driver, ascan driver, and a logic circuit of a display device, and the secondcircuit group include a pixel portion of the display device.

In a semiconductor device of the present invention, the pixel portion ofthe display device may include an EL element and the second transistormay be a transistor controlling supply of current to the EL element.Alternatively, the pixel portion of the display device may include aliquid crystal element and the second transistor may be a transistorcontrolling application of voltage to the liquid crystal element.

A method for manufacturing a semiconductor device of the presentinvention includes the following steps: irradiating the surface of asemiconductor substrate with an ion to form a weakened layer (aseparation layer) inside the semiconductor substrate; separating asingle-crystal semiconductor layer from the semiconductor substrate withthe weakened layer used as a separation surface; bonding thesingle-crystal semiconductor layer over a base substrate with a bondinglayer interposed therebetween; and generating heat shrink by heattreatment of the base substrate to generate compressive strain in thesingle-crystal semiconductor layer.

A method for manufacturing a semiconductor device of the presentinvention includes the following steps: irradiating the surface of asemiconductor substrate with an ion to form a weakened layer (aseparation layer) inside the semiconductor substrate; separating asingle-crystal semiconductor layer from the semiconductor substrate withthe weakened layer used as a separation surface; bonding thesingle-crystal semiconductor layer over a base substrate with a bondinglayer interposed therebetween; and bonding a single-crystalsemiconductor layer having tensile strain over the base substrate withthe bonding layer interposed between after generating heat shrink byheat treatment of the base substrate to generate compressive strain inthe single-crystal semiconductor layer.

As the bonding layer, a silicon oxide film or the like formed using anorganic silane gas by a chemical vapor deposition method is typicallyused.

In addition, in order to use the present invention for a display device,the base substrate is preferably formed using a light-transmittingmaterial.

In a semiconductor device manufactured according to the presentinvention, a transistor using a single-crystal semiconductor layer as anactive layer and a transistor using a single-crystal semiconductor layerhaving compressive strain as an active layer are formed over the sameinsulating substrate formed using glass, plastic, or the like.

Alternatively, in a semiconductor device manufactured according to thepresent invention, a transistor using a single-crystal semiconductorlayer having tensile strain as an active layer and a transistor using asingle-crystal semiconductor layer having compressive strain as anactive layer are formed over the same insulating substrate formed usingglass, plastic, or the like.

Polarities of transistors which lead to improvement in mobility aredifferent between the case where tensile strain is applied to asemiconductor layer and the case where compressive strain is applied toa semiconductor layer. In a conventional process, only either tensilestrain or compressive strain can be applied to a semiconductor layerformed over a substrate, whereas a semiconductor layer to whichappropriate strain is applied by the present invention can be formed ina desired region in an attachment step. In addition, in accordance withprocedures in which after a single-crystal semiconductor layer is bondedto a base substrate, heat shrink is generated by heat treatment of thesubstrate and compressive strain is applied to the bonded single-crystalsemiconductor layer, and then a single-crystal semiconductor layerhaving tensile strain, which is separately formed over a semiconductorsubstrate, is bonded over the base substrate, it is a great advantagethat the heat shrink of the base substrate does not affect thesingle-crystal semiconductor layer having tensile strain.

In addition, as for general effects of stress, when a film formed over asubstrate expands, “a warp” is generated on the substrate, whereas whenthe film formed over the substrate contracts, “a warp” having a reversedconvex direction is generated. On the other hand, in the presentinvention, when an insulating substrate formed using glass, plastic, orthe like, which generates heat shrink or the like with relative ease, isused as the base substrate, heat shrink force on the base substrate sideis actively applied to a single-crystal semiconductor layer which isbonded to a layer formed above to generate compressive strain for thesingle-crystal semiconductor layer.

Further, the step of applying compressive strain to the semiconductorlayer is a step utilizing part of shrink by heat treatment of thesubstrate, which has been performed conventionally, without adding anynew step, and can be realized extremely easily, which is a greatadvantage.

Therefore, when a transistor in which an effect of improvement inmobility can be obtained by using compressive strain and a transistor inwhich an effect of improvement in mobility can be obtained by usingtensile strain are used, a semiconductor device which can performoperations more efficiently at high speed is provided.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1A illustrates a plane outline of a semiconductor device of thepresent invention, and FIG. 1B illustrates a cross-sectional structureof a semiconductor device of the present invention;

FIGS. 2A to 2E illustrate manufacturing steps of a semiconductor deviceof the present invention;

FIGS. 3A to 3D illustrate manufacturing steps of a semiconductor deviceof the present invention;

FIGS. 4A to 4D illustrate manufacturing steps of a semiconductor deviceof the present invention;

FIGS. 5A to 5D illustrate manufacturing steps of a semiconductor deviceof the present invention;

FIGS. 6A to 6C illustrate manufacturing steps of a semiconductor deviceof the present invention;

FIGS. 7A and 7B illustrate one mode of a semiconductor device of thepresent invention (an EL display device);

FIGS. 8A to 8E each illustrate an electronic device to which the presentinvention can be applied;

FIG. 9 is a block diagram illustrating a main structure of an electronicdevice to which the present invention can be applied: and

FIGS. 10A and 10B each illustrate an electronic device to which thepresent invention can be applied.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiment modes of the present invention will be describedwith reference to the drawings. Note that the present invention is notlimited to the following description. The present invention can beimplemented in various different ways and it will be readily appreciatedby those skilled in the art that various changes and modifications arepossible without departing from the spirit and the scope of the presentinvention. Therefore, the present invention should not be construed asbeing limited to the following description of the embodiment modes. Notethat in structures of the present invention described hereinafter, likeportions or portions having similar functions are denoted by the samereference numerals in different drawings, and description thereof is notrepeated.

Embodiment Mode 1

A method for manufacturing a semiconductor device of the presentinvention is described with reference to FIGS. 1A to 6C.

A method for providing a single-crystal semiconductor layer over asubstrate having an insulating surface is described with reference toFIGS. 2A to 2E and FIGS. 3A to 3D.

A semiconductor substrate 108 shown in FIG. 2A is cleaned, and ionswhich are accelerated by an electric field are introduced into thesemiconductor substrate 108 from the surface thereof to reach apredetermined depth to form a weakened layer (a separation layer) 110.Ion irradiation is performed in consideration of the thickness of asingle-crystal semiconductor layer which is formed over a basesubstrate. The thickness of the single-crystal semiconductor layer ispreferably equal to or greater than 1 μm and equal to or less than 3 μm.Accelerating voltage for irradiating the semiconductor substrate 108with ions is set in consideration of such a thickness.

A p-type or n-type single-crystal silicon substrate (silicon wafer) istypically used as the semiconductor substrate 108. Alternatively, asubstrate of silicon or germanium, or a substrate of a compoundsemiconductor such as gallium arsenide or indium phosphide can be usedas another single-crystal semiconductor substrate. Although a method inwhich a single-crystal semiconductor substrate is irradiated with ionsof hydrogen or fluorine to reach a predetermined depth and then heattreatment is performed to separate a surface layer of a single-crystalsilicon layer is used in this embodiment mode, a method in whichepitaxial growth of single-crystal silicon is performed over a poroussilicon layer and then the porous silicon layer is separated by waterjet may be used.

The weakened layer 110 is formed by introducing ions of hydrogen,helium, or halogen typified by fluorine into the semiconductor substrate108 by an ion-doping method or an ion implantation method. In the caseof irradiating the semiconductor substrate 108 with fluorine ions ashalogen, BF₃ may be used as a source gas. Note that an ion implantationmethod refers to a method in which an ionized gas is separated by massto introduce desired ions into a semiconductor layer.

In the case where halogen ions such as fluorine ions are introduced intothe semiconductor substrate (e.g., single-crystal silicon substrate)108, introduced fluorine knocks out (expels) silicon atoms in a crystallattice of silicon to effectively form a vacant portion, so that aminute void is formed in the weakened layer 110. In this case, thevolume of the minute void formed in the weakened layer 110 is changed byheat treatment at relatively low temperature, and a thin single-crystalsemiconductor layer can be formed by separation along the weakened layer110. After irradiation with fluorine ions, irradiation with hydrogenions may be performed so that hydrogen is contained in the void. It ispreferable to effectively utilize the action of fluorine ions andhydrogen ions in such a manner because the weakened layer 110 which isformed to separate a thin semiconductor layer from the semiconductorsubstrate 108 utilizes change in the volume of the minute void formed inthe weakened layer 110.

Alternatively, irradiation with one kind of ions or plural kinds of ionsof different mass numbers consisting of a single kind of atoms may beperformed. For example, in the case of irradiating with hydrogen ions,the hydrogen ions preferably include H⁺, H₂ ⁺, and H₃ ⁺ ions with a highproportion of H₃ ⁺ ions. With a high proportion of H₃ ⁺ ions,irradiation efficiency can be increased and irradiation time can beshortened. With such a structure, separation can be easily performed.

Since it is necessary to perform irradiation with ions at a high dose information of the weakened layer 110, the surface of the semiconductorsubstrate 108 is roughened in some cases. Therefore, a protective filmagainst irradiation with ions may be provided on a surface with whichions are irradiated by using a silicon nitride layer, a silicon nitrideoxide layer, or the like with a thickness of 50 to 200 nm.

Alternatively, before formation of the weakened layer 110, cleaning maybe performed on the semiconductor substrate 108 and an oxide film on thesurface of the semiconductor substrate 108 may be removed to performthermal oxidation. As thermal oxidation, general dry oxidation may beperformed; however, oxidation in an oxidizing atmosphere to whichhalogen is added is preferably performed. For example, heat treatment isperformed at a temperature of higher than or equal to 700 ° C. in anatmosphere containing HCl by 0.5 to 10 volume % (preferably 3 volume %)with respect to oxygen. The heat oxidation is preferably performed at atemperature of 950 to 1100° C. Processing time may be 0.1 to 6 hours,preferably 0.5 to 1 hour. The film thickness of an oxide film which isto be formed is 10 to 1000 nm (preferably 50 to 200 nm), for example,100 nm.

As well as HCl, one or a plurality of kinds selected from HF, NF₃, HBr,Cl₂, ClF₃, BCl₃, F₂, Br), or the like can be used as a compoundcontaining halogen.

When heat treatment is performed within such a temperature range, agettering effect by halogen can be obtained. Gettering particularly hasan effect of removing a metal impurity. That is, an impurity such asmetal turns into a volatile chloride, and then is diffused into a gasphase to be removed by the action of chlorine. The above-described heattreatment is effective for the semiconductor substrate 108, the surfaceof which is treated with chemical mechanical polishing (CMP). Further,hydrogen has an effect of compensating defects at an interface betweenthe semiconductor substrate 108 and the oxide film which is to be formedso as to reduce localized level density of the interface, so that theinterface between the semiconductor substrate 108 and the oxide film isinactivated, so that electric characteristics are stabilized.

The oxide film formed by this heat treatment can contain halogen. Whenhalogen is contained at a concentration of 1×10¹⁷ to 5×10²⁰/cm³, theoxide film can have a function as a protective film which captures animpurity such as metal and prevents contamination of the semiconductorsubstrate 108.

Next, as shown in FIG. 2B, a silicon oxide film is formed as a bondinglayer 104 on the surface of the semiconductor substrate 108, which formsa bond with a base substrate 101. As the silicon oxide film, a siliconoxide film formed using an organic silane gas by a chemical vapordeposition method is preferable. Alternatively, a silicon oxide filmformed using a silane gas by a chemical vapor deposition method can beused. Film formation by a chemical vapor deposition method is performedat a temperature of, for example, 100 to 400° C., preferably 200 to 350°C., at which degassing of the weakened layer 110 which is formed in thesingle-crystal semiconductor substrate 108 does not occur. Heattreatment for separating a single-crystal semiconductor layer 102 fromthe semiconductor substrate 108 is performed at a higher heat treatmenttemperature (e.g., a temperature of 400 to 600° C.) than temperature forfilm formation.

The bonding layer 104 has a smooth surface and forms a hydrophilicsurface. A silicon oxide film is suitable for the bonding layer 104. Inparticular, a silicon oxide film formed using an organic silane gas by achemical vapor deposition method is preferable. As an organic silanegas, a silicon-containing compound such as tetraethoxysilane (TEOS)(chemical formula: Si(OC₂H₅)₄), trimethylsilane (TMS) (chemical formula:(CH₃)₃SiH), tetramethylsilane (chemical formula: Si(CH₃)₄),tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane(OMCTS), hexamethyldisilazane (HMDS), triethoxysilane (chemical formula:SiH(OC₂H₅)₃), or trisdimethylaminosilane (chemical formula:SiH(N(CH₃)₂)₃) can be used. Alternatively, a silicon oxide film formedusing a silane gas by a chemical vapor deposition method can be used.

The bonding layer 104 which has a smooth surface and forms a hydrophilicsurface is provided with a thickness of 5 to 500 nm. With such athickness, roughness of a surface on which the bonding layer 104 isformed can be smoothed and smoothness of a growth surface of the filmcan be ensured. Further, distortion between the single-crystalsemiconductor layer 102 and a substrate which are bonded to each othercan be reduced. The base substrate 101 may be provided with a similarsilicon oxide film. That is, when the single-crystal semiconductor layer102 is bonded to the base substrate 101, the single-crystalsemiconductor layer 102 and the base substrate 101 can be firmly bondedto each other when the bonding layer 104 formed of a silicon oxide layerwhich is preferably formed using organic silane as a material isprovided on either one or both surfaces of the base substrate 101 andthe single-crystal semiconductor layer 102 which are to be bonded.

FIG. 2C shows a mode in which a surface of the base substrate 101 and asurface of the semiconductor substrate 108, on which the bonding layer104 is formed, are disposed in contact to be bonded to each other. Thesurfaces which are to be bonded are cleaned sufficiently. Then, when thebase substrate 101 and the bonding layer 104 are disposed in contact, abond is formed. This bond is formed by Van der Waals force. When thebase substrate 101 and the semiconductor substrate 108 are pressedagainst each other, a stronger bond can be formed by hydrogen bonding.

In order to form a favorable bond, the surfaces which are to form a bondmay be activated. For example, the surfaces which are to form a bond areirradiated with an atomic beam or an ion beam. When an atomic beam or anion beam is used, an inert gas neutral atom beam or inert gas ion beamof argon or the like can be used. Alternatively, plasma irradiation orradical treatment may be performed. With such a surface treatment, abond between different kinds of materials can be easily formed even at atemperature of 200 to 400° C.

A step of separating the single-crystal semiconductor layer 102 from thesemiconductor substrate 108 and a step of bonding the base substrate 101and the single-crystal semiconductor layer 102 firmly may be performedby separate heat treatments or may be simultaneously performed by oneheat treatment.

After the base substrate 101 and the semiconductor substrate 108 arebonded to each other with the bonding layer 104 interposed therebetween,heat treatment or pressure treatment is preferably performed. When heattreatment or pressure treatment is performed, bonding strength can beincreased. Pressure treatment is performed so that pressure is appliedin a perpendicular direction to the bonded surface, in consideration ofpressure resistance of the base substrate 101 and the semiconductorsubstrate 108.

Subsequently, in FIG. 2D, heat treatment is performed to separate thesemiconductor substrate 108 from the base substrate 101 with part of theweakened layer 110 used as a separation plane. For example, when heattreatment is performed at 400 to 600° C., the volume of minute voidsformed in the weakened layer 110 is changed, so that separation can beperformed along the weakened layer 110. The heat treatment is preferablyperformed at a temperature lower than the temperature at which heattreatment is performed on the base substrate 101 in advance. Since thebonding layer 104 is bonded to the base substrate 101, thesingle-crystal semiconductor layer 102 having the same crystallinity asthe semiconductor substrate 108 remains over the base substrate 101.

Further, as shown in FIG. 2E, heat treatment is performed on the basesubstrate 101 to which the single-crystal semiconductor layer 102 isbonded. The heat treatment at this time is preferably performed at atemperature lower than the temperature at which heat treatment isperformed on the base substrate 101 in advance and higher than thetemperature of the heat treatment at the time of separation. With thisheat treatment, the base substrate 101 slightly generates heat shrinkand applies compressive strain to the single-crystal semiconductor layer102 bonded over the base substrate 101.

At this time, in the case where the temperature of the heat treatment istoo high, when the base substrate 101 excessively generates heat shrink,the single-crystal semiconductor layer 102 is separated from the basesubstrate 101 at the bonded surface or a peripheral interface in somecases. Therefore, the temperature of the heat treatment is preferablyadjusted as appropriate in accordance with a material of the basesubstrate.

Next, steps of forming a single-crystal semiconductor layer with abonding layer provided on the base substrate side are described withreference to FIGS. 3A to 3D. FIG. 3A shows a step in which thesemiconductor substrate 108 provided with a silicon oxide film 121 isirradiated with ions which are accelerated by an electric field to reacha predetermined depth to form the weakened layer 110. Ion irradiation issimilar to that shown in FIG. 2A. When the silicon oxide film 121 isformed on the surface of the semiconductor substrate 108, the surfacecan be prevented from being damaged and from losing smoothness due toion irradiation. Further, the silicon oxide film 121 has an effect ofpreventing diffusion of impurities against the single-crystalsemiconductor layer 102 which is formed of the semiconductor substrate108.

FIG. 3B shows a step in which the base substrate 101, over which ablocking layer 109 and the bonding layer 104 are formed, and a surfaceof the semiconductor substrate 108, on which the silicon oxide film 121formed, are disposed in contact with each other to be bonded. When thebonding layer 104 over the base substrate 101 and the silicon oxide film121 of the semiconductor substrate 108 are disposed in contact with eachother, a bond is formed.

After that, the semiconductor substrate 108 is separated, as shown inFIG. 3C. Heat treatment for separating the single-crystal semiconductorlayer 102 is performed in a manner similar to that shown in FIG. 2D. Theheat treatment in a bonding-separating process is performed at atemperature lower than or equal to the temperature at which the heattreatment is performed on the base substrate 101 in advance. Thus, thesemiconductor substrate shown in FIG. 3C can be obtained.

Further, as shown in FIG. 3D, heat treatment is performed on the basesubstrate 101 to which the single-crystal semiconductor layer 102 isbonded. The heat treatment at this time is preferably performed at atemperature lower than the temperature at which heat treatment isperformed on the base substrate 101 in advance and higher than thetemperature of the heat treatment at the time of separation. With thisheat treatment, the base substrate 101 slightly generates heat shrinkand applies compressive strain to the single-crystal semiconductor layer102 bonded over the base substrate 101.

At this time, in the case where the temperature of the heat treatment istoo high, when the base substrate 101 excessively generates heat shrink,the single-crystal semiconductor layer 102 is separated from the basesubstrate 101 at the bonded surface or a peripheral interface in somecases. Therefore, the temperature of the heat treatment is preferablyadjusted as appropriate in accordance with a material of the basesubstrate.

In FIGS. 2A to 3D, a substrate having an insulating surface can be usedas the base substrate 101. For example, any of various glass substrateswhich are used in the electronics industry and referred to as non-alkaliglass substrates, such as aluminoborosilicate glass substrates,aluminosilicate glass substrates, and barium borosilicate glasssubstrates can be used. Alternatively, a quartz substrate may be used. Asubstrate having a suitable transition point may be used in accordancewith the temperature of the heat treatment. When manufacturing steps ofa single-crystal semiconductor layer are performed more than once inaccordance with the above-described steps, a single-crystalsemiconductor layer can be formed over a large substrate which is longerthan one meter on a side. Further, when heat shrink in accordance withthe heat treatment of the substrate is applied, compressive strain canbe applied to the single-crystal semiconductor layer transferred overthe substrate.

Further, after the single-crystal semiconductor layer is oncetransferred and compressive strain is applied to the single-crystalsemiconductor layer by the heat treatment of the substrate, a differentsingle-crystal semiconductor layer is further formed, so that a normalsingle-crystal semiconductor layer and a single-crystal semiconductorlayer to which compressive strain is applied can be formed over the samesubstrate.

Meanwhile, after the single-crystal semiconductor layer is once formedand compressive strain is applied to the single-crystal semiconductorlayer by the heat treatment of the substrate, a substrate where asingle-crystal semiconductor layer having tensile strain is grown over asilicon germanium layer having reduced stress, which is provided overthe semiconductor substrate, so that a single-crystal semiconductorlayer having tensile strain and a single-crystal semiconductor layer towhich compressive strain is applied can be formed over the samesubstrate.

After the normal single-crystal semiconductor layer and thesingle-crystal semiconductor layer having tensile strain as describedabove are formed, it is preferable to avoid heat treatment at atemperature which exceeds heating temperature at the time of applyingcompressive strain. Note that even when such a heat treatment isperformed, compressive strain is applied to the normal single-crystalsemiconductor layer and the single-crystal semiconductor layer havingtensile strain, which does not become a major problem because an adverseeffect thereof is negligible.

Note that conditions and the like of a step in which the single-crystalsemiconductor layer having tensile strain is grown over the silicongermanium layer having reduced stress by utilizing difference of latticeconstants are not particularly limited to certain conditions in thepresent invention.

Subsequently, a process of forming a transistor by using thesingle-crystal semiconductor layers formed over the base substrate 101to form a circuit is described.

As shown in FIG. 4A, after a single-crystal semiconductor layer 150 anda single-crystal semiconductor layer 160 having compressive strain areformed over the base substrate 101 with the bonding layer 104 interposedtherebetween in accordance with the above-described process, a resistpattern having a desired shape is formed by using a photomask, andisland-shaped semiconductor layers 151, 152, 161, and 162 are formed byprocessing using photolithography, as shown in FIG. 4B.

Further, end portions of the semiconductor layers 151, 152, 161, and 162are each formed to have a tilt angle (a taper angle). The reason forforming each of the end portions of the semiconductor layers 151, 152,161, and 162 to have a taper angle is that an advantageous effect ofimproving coverage of a semiconductor layer of an insulating film whichis formed later can be expected, for example. Note that in the casewhere this taper angle is small, a parasitic transistor whosecharacteristics are different from those of a center portion of each ofthe semiconductor layers 151, 152, 161, and 162 is formed in a taperregion in some cases. In order to prevent an adverse effect of theparasitic transistor, the taper angle is preferably large. Therefore, itis preferable that the taper angle be approximately 45 to 90 degrees.

Note that in this specification, “an end portion” of the semiconductorlayer corresponds to an edge portion of the semiconductor layer formedto have an island shape. “A side surface” of the semiconductor layercorresponds to the surface of the edge portion.

As for an etching process, either plasma etching (dry etching) or wetetching may be employed. In the case of processing a large substrate,plasma etching is suitable. As an etching gas, a fluorine-based gas suchas CF₄ or NF₃ or a chlorine-based gas such as Cl₂ or BCl₃ is used, andan inert gas such as He or Ar may be added to the etching gas asappropriate. When an etching process using an atmospheric discharge isemployed, local discharge process is also possible, and it is notnecessary to form a mask over the entire surface of the substrate.

In the present invention, a conductive layer for forming a wiring layeror an electrode layer, a mask for forming a predetermined pattern, orthe like may be formed by a method in which a pattern can be formed asselected, such as a droplet discharge method. By a droplet discharge(jetting) method (also referred to as an ink-jet method depending on itssystem), a droplet of a composition which is mixed for a particularpurpose is discharged (jetted) as selected, so that a predeterminedpattern (such as a conductive layer or an insulating layer) can beformed. At this time, treatment for controlling wettability or adhesionmay be separately performed on a region where the pattern is fin med.Alternatively, a method in which a pattern can be transferred or drawn,for example, a printing method (a method for forming patterns, such asscreen printing or offset printing), or the like can be used.

A mask used in this embodiment mode is formed using a resin materialsuch as an epoxy resin, an acrylic resin, a phenol resin, a novolacresin, a melamine resin, or a urethane resin. Alternatively, an organicmaterial such as benzocyclobutene, parylene, fluorinated arylene ether,or polyimide having light-transmitting properties; a compound materialformed by polymerization of a siloxane-based polymer or the like; acomposition material containing a soluble homopolymer and a copolymer;or the like can be used. Further alternatively, a commercial resistmaterial containing a photosensitizer may be used. For example, apositive resist or a negative resist may be used. in the case of using adroplet discharge method, even when any of the above-described materialsis used, surface tension and viscosity are adjusted as appropriate by,for example, adjusting concentration of a solvent or adding a surfactantor the like.

Subsequently, as shown in FIG. 4C, a gate insulating film 171 is formedto cover the surfaces and the end portions of the semiconductor layers151, 152, 161, and 162 sufficiently. Preferably, when the thickness ofthe insulating film in a region which is in contact with the sidesurfaces of the semiconductor layers 151, 152, 161, and 162 isincreased, electric field concentration at the end portions of thesemiconductor layers 151, 152, 161, and 162 can be relieved, so thatgeneration of leakage current, or the like can be prevented.

As the gate insulating film 171, an insulating film may be formed byplasma CVD, sputtering, or the like. In this embodiment mode, thethickness of the gate insulating film may be 1 to 150 nm, morepreferably, approximately 10 to 80 nm.

The gate insulating film 171 may be formed using a silicon oxide film ormay be formed to have a stacked-layer structure of a silicon oxide filmand a silicon nitride film. The gate insulating film 171 may be formedby stacking insulating films by plasma CVD or low-pressure CVD, or maybe formed by solid-phase oxidation or solid-phase nitridation usingplasma treatment. Alternatively, as shown in FIG. 4D, after performingself-oxidation of the surfaces of the semiconductor layers 151, 152,161, and 162 to form gate insulating films 172 a to 172 d, the gateinsulating film 171 may be formed to have a stacked-layer structure. Theinsulating films formed by self-oxidation of the surface of thesemiconductor layers are dense, have high withstand voltage, and arehighly reliable.

In the case of forming the gate insulating films through theabove-described step, coverage of the surfaces of the semiconductorlayers 151, 152, 161, and 162 is naturally favorable. Therefore,formation of the taper angles at the end portions of the semiconductorlayers 151, 152, 161, and 162 as described above is not necessarilyperformed.

For solid-phase oxidation or solid-phase nitridation by plasmatreatment, it is preferable to use plasma excited by a microwave(typically 2.45 GHz) at an electron density of 1×10¹¹ to 1×10¹³/cm³ andat an electron temperature of 0.5 to 1.5 eV. This is to form a denseinsulating film and to obtain a practical reaction rate in solid-phaseoxidation or solid-phase nitridation at a temperature lower than orequal to 500° C.

When the surface of the semiconductor layer is oxidized by this plasmatreatment, the plasma treatment is performed in an oxygen atmosphere(e.g., in an atmosphere containing oxygen (O₂) or dinitrogen monoxide(N₂O) and a rare gas (containing at least one of He, Ne, Ar, Kr, or Xe)or in an atmosphere containing oxygen or dinitrogen monoxide, hydrogen(H₂) and a rare gas). Alternatively, when the surface of thesemiconductor layer is nitrided by plasma treatment, the plasmatreatment is performed in a nitrogen atmosphere (e.g., in an atmospherecontaining nitrogen (N₂) and a rare gas, in an atmosphere containingnitrogen, hydrogen, and a rare gas, or in an atmosphere containing NH₃and a rare gas).

Note that plasma treatment includes oxidation treatment, nitridationtreatment, oxynitridation treatment, hydrogenation treatment, andsurface modifying treatment on a semiconductor layer, an insulatinglayer, and a conductive layer. In each treatment, a gas to be suppliedmay be selected in accordance with its purpose.

The semiconductor layer may be subjected to oxidation treatment ornitridation treatment as follows. First, a treatment chamber isevacuated, and a plasma treatment gas containing oxygen or nitrogen isintroduced from a gas supply portion. A substrate temperature is roomtemperature or is heated to a temperature of 100 to 500° C. by atemperature control portion.

Next, microwaves are supplied to an antenna from a microwave supplyportion. Then, the microwaves are introduced into the treatment chamberfrom the antenna through a dielectric plate, so that plasma isgenerated. When plasma is excited with microwave introduction, plasmawith a low electron temperature (lower than or equal to 3 eV, preferablylower than or equal to 1.5 eV) and high electron density (higher than orequal to 1×10¹¹/cm³) can be generated. With oxygen radicals (whichinclude OH radicals in some cases) and/or nitrogen radicals (whichinclude NH radicals in some cases) generated by this high-densityplasma, the surface of the semiconductor layer can be oxidized and/ornitrided. When a rare gas such as argon is mixed into the plasmatreatment gas, oxygen radicals or nitrogen radicals can be efficientlygenerated by excited species of the rare gas. This method enablessolid-phase oxidation, solid-phase nitridation, or solid-phaseoxynitridation at a low temperature of lower than or equal to 500° C. byefficiently utilizing the active radicals excited with the plasma.

Through such a solid-phase oxidation treatment or solid-phasenitridation treatment by the plasma treatment as described above, aninsulating layer similar to a thermal oxide film, which is formed at 950to 1050° C., can be obtained even when a glass substrate having atemperature limit of lower than or equal to 700° C. is used. That is, afilm having high reliability can be formed as a gate insulating film ofa transistor.

Alternatively, for formation of the gate insulating film, a highdielectric constant material may be used. When a high dielectricconstant material is used for the gate insulating film, gate leakagecurrent can be reduced. As a typical high dielectric constant material,zirconium dioxide, hafnium oxide, titanium dioxide, tantalum pentoxide,or the like can be used. Further alternatively, a silicon oxide film maybe formed by solid-phase oxidation by plasma treatment.

Alternatively, the surface of the semiconductor region can be oxidizedby a GRTA method, an LRTA method, or the like to form a thermal oxidefilm, so that a thin silicon oxide film can be formed. Note that inorder to form a dense insulating film having small gate leakage currentat a low film formation temperature, a rare gas element such as argon ispreferably contained in a reaction gas and mixed into an insulating filmto be formed.

Subsequently, a first conductive film having a thickness of 20 to 100 nmand a second conductive film having a thickness of 100 to 400 mu whichserve as gate electrode layers are stacked over the gate insulating film171. The first conductive film and the second conductive film can beformed by sputtering, an evaporation method, CVD, or the like. The firstconductive film and the second conductive film may be formed using anelement selected from tantalum (Ta), tungsten (W), titanium (Ti),molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), or neodymium(Nd), or an alloy material or a compound material containing any of theabove-described elements as a main component. Alternatively, asemiconductor film typified by a polycrystalline silicon film doped withan impurity element such as phosphorus, an AgPdCu alloy, or the like maybe used as the first conductive film and the second conductive film. Theconductive films used as the gate electrode layer are not limited tohaving the stacked-layer structure as described above, and may have asingle-layer structure. For example, a three-layer structure may be usedin which a tungsten film with a thickness of 50 nm as a first conductivefilm, an aluminum-silicon alloy (Al—Si) film with a thickness of 500 nmas a second conductive film, and a titanium nitride film with athickness of 30 nm as a third conductive film are sequentially stacked.In the case of the three-layer structure, tungsten nitride may be usedinstead of tungsten for the first conductive film; an aluminum-titaniumalloy (Al—Ti) film may be used instead of an aluminum-silicon (Al—Si)alloy film for the second conductive film; or a titanium film may beused instead of a titanium nitride film for the third conductive film.In this embodiment mode, a tantalum nitride film with a thickness of 30nm is formed as the first conductive film and tungsten (W) with athickness of 370 mu is fowled as the second conductive film.

Next, the first conductive film and the second conductive film areprocessed into desired shapes to form gate electrodes 173 to 176 formedof stacked-layer structures of first gate electrode layers 173 a, 174 a,175 a, and 176 a and second gate electrode layers 173 b, 174 b, 175 b,and 176 b, respectively (see FIG. 5A). The first gate electrode layersand the second gate electrode layers can be etched to have desired tapershapes by adjusting etching conditions (the amount of power applied to acoil electrode layer, an electrode temperature on the substrate side,and the like) as appropriate by ICP (inductively coupled plasma)etching. Further, angles and the like of the taper shapes can also becontrolled by the shape of the mask. Note that as an etching gas, achlorine-based gas typified by Cl₂, BCl₃, SiCl₄, CCl₄, or the like, afluorine-based gas typified by CF₄, SF₆, NF₃, or the like, or O₂ can beused as appropriate.

In this embodiment mode, the example where the first gate electrodelayer and the second gate electrode layer are formed to haveperpendicular side surfaces is described; however, the present inventionis not limited to this. Both the first gate electrode layer and thesecond gate electrode layer may be formed into tapered shapes, or one ofthe first gate electrode layer and the second gate electrode layer maybe formed into a tapered shape and the other thereof may be formed tohave a perpendicular side surface by anisotropic etching. In addition,the taper angles may be different between the stacked gate electrodelayers or may be the same. With the tapered shape, coverage of a filmwhich is stacked thereover is improved and defects are reduced, so thatreliability is improved.

In addition, although not shown in FIG. 5A, the gate insulating film 171is etched to some extent and reduced in thickness (so-called filmreduction) in the etching step for forming the gate electrode layer insome cases.

Subsequently, an n-type impurity element 177 is added by using the gateelectrodes 173 to 176 as masks. Thus, first impurity regions 177 a to177 h are formed (see FIG. 5B). In this embodiment mode, doping isperformed by using phosphine (PH₃) as a doping gas containing animpurity element (the doping gas is obtained by diluting PH₃ withhydrogen (H₂); a rate of PH₃ in the gas is 5%) under conditions that agas flow rate is 80 sccm, beam current is 54 μA/cm, accelerating voltageis 50 kV, and dosage is 7.0×10¹³ ions/cm². Here, addition is performedsuch that each of the first impurity regions 177 a to 177 h contains then-type impurity element at a concentration of approximately 1×10¹⁷ to5×10¹⁸/cm³. In this embodiment mode, phosphorus (P) is used as then-type impurity element.

Next, masks 178 a to 178 c which cover the semiconductor layer 152, partof the semiconductor layer 161, and the semiconductor layer 162,respectively, are formed. An n-type impurity element 179 is added byusing the masks 178 a to 178 c and the gate electrode 173 as masks.Thus, second impurity regions 179 a to 179 d and third impurity regions177 i and 177 j are formed. In this embodiment mode, doping is performedby using PH₃ as a doping gas containing an impurity element (the dopinggas is obtained by diluting PH₃ with hydrogen (H₂); a rate of PH₃ in thegas is 5%) under conditions that a gas flow rate is 80 sccm, beamcurrent is 540 μA/cm, accelerating voltage is 70 kV, and dosage is5.0×10¹⁵ ions/cm². Here, addition is performed such that each of thesecond impurity regions 179 a to 179 d contains the n-type impurityelement at a concentration of approximately 5×10¹⁹ to 5×10²⁰/cm³.Further, a channel formation region 180 a is formed in the semiconductorlayer 151 and a channel formation region 180 b is formed in thesemiconductor layer 161 (see FIG. 5C).

The second impurity regions 179 a to 179 d are high-concentration n-typeimpurity regions and function as source regions and drain regions ofn-channel transistors. On the other hand, the third impurity regions 177i and 177 j are low-concentration n-type impurity regions and functionas so-called LDD (lightly doped drain) regions. Further, since the thirdimpurity regions 177 i and 177 j are formed in so-called offset regions,which are not covered with the gate electrode layers, the third impurityregions 177 i and 177 j have an effect of reducing off leakage currentof a transistor. Accordingly, a highly reliable transistor at the timeof high voltage application can be realized.

Subsequently, after the masks 178 a to 178 c which are described aboveare removed, masks 181 a and 181 b which cover the semiconductor layers151 and 161, respectively, are formed. A p-type impurity element 182 isadded by using the masks 181 a and 181 b and the gate electrodes 174 and176 as masks. Thus, p-type impurity regions 182 a to 182 d are formed.Since boron (B) is used as a p-type impurity element in this embodimentmode, doping is performed by using diborane (B₂H₆) as a doping gascontaining an impurity element (the doping gas is obtained by dilutingB₂H₆ with hydrogen (H₂); a rate of B₂H₆ in the gas is 15%) underconditions that a gas flow rate is 70 sccm, beam current is 180 μA/cm,accelerating voltage is 80 kV, and dosage is 2.0×10¹⁵ ions/cm². Here,addition is performed such that each of the p-type impurity regions 182a to 182 d contains the p-type impurity element at a concentration ofapproximately 1×10²⁰ to 5×10²¹/cm³. Further, a channel formation region183 a is formed in the semiconductor layer 152 and a channel formationregion 183 b is formed in the semiconductor layer 162 (see FIG. 5D).

The p-type impurity regions 182 a to 182 d are high-concentration p-typeimpurity regions and function as source regions and drain regions ofp-channel transistors.

Next, in order to activate the impurity element which is added to thesemiconductor layers 151, 152, 161, and 162, heat treatment, intenselight irradiation, or laser beam irradiation may be performed. At thesame time as activation, plasma damage to the gate insulating layer andplasma damage to the interface between the gate insulating layer and thesemiconductor layer can be recovered.

Subsequently, as shown in FIG. 6A, an interlayer insulating filmcovering the semiconductor layers and the gate electrodes is formed. Inthis embodiment mode, a single-layer structure of an interlayerinsulating film 184 is shown. As the interlayer insulating film 184, asilicon nitride film, a silicon nitride oxide film, a silicon oxynitridefilm, a silicon oxide film, or the like which can be formed bysputtering or plasma CVD may be used. Alternatively a stacked-layerstructure of two or more layers may be used.

Further, heat treatment is performed at 300 to 550° C. for 1 to 12 hoursin a nitrogen atmosphere to hydrogenate the semiconductor layers. Thisheat treatment is preferably performed at 400 to 500° C. In this step,dangling bonds in the semiconductor layers are terminated by hydrogencontained in the interlayer insulating film 184. In this embodimentmode, heat treatment is performed at 410° C. for 1 hour.

The interlayer insulating film 184 can be formed using a materialselected from aluminum nitride, aluminum oxynitride, aluminum nitrideoxide containing more nitrogen than oxygen, aluminum oxide, diamond-likecarbon (DLC), nitrogen-containing carbon (CN), or any other substancecontaining an inorganic insulating material. Alternatively, a siloxaneresin may be used. A siloxane resin is a resin containing a Si—O—Sibond. The skeleton structure of siloxane is formed of a bond of siliconand oxygen. As a substituent, an organic group containing at leasthydrogen (e.g., an alkyl group or aromatic hydrocarbon) is used.Alternatively, a fluoro group or a fluoro group and an organic groupcontaining at least hydrogen may be used as the substituent.Alternatively, an organic insulating material may be used. As an organicmaterial, polyimide, acrylic, polyamide, polyimide amide, resist,benzocyclobutene, polysilazane, or the like can be used. Alternatively,a coating film having favorable flatness, which is formed by a coatingmethod, may be used.

The interlayer insulating film 184 can be formed by dipping, spraycoating, coating with a variety of coaters, an evaporation method, orthe like, as well as sputtering or plasma CVD, which is described above.Alternatively, the interlayer insulating film 184 may be formed by adroplet discharge method. In this case, a material solution can besaved. Alternatively, a method by which a pattern can be transferred ordrawn, like a droplet discharge method, for example, a printing method(a method for forming a pattern, such as screen printing or offsetprinting), or the like can be used.

Subsequently, contact holes (opening portions) which reach thesemiconductor layer and the gate electrode layer are formed in theinterlayer insulating film and the gate insulating film by using a maskformed of a resist. Etching may be performed only once or a plurality oftimes depending on selectivity of the materials which are used. Further,either wet etching or dry etching may be performed, or both wet etchingand dry etching may be performed. As an etchant of wet etching, it ispreferable to use a solution containing fluorinated acid such as a mixedsolution containing ammonium hydrogen fluoride and ammonium fluoride. Asan etching gas, a chlorine-based gas typified by Cl₂, BCl₃, SiCl₄, orCCl₄; a fluorine-based gas typified by CF₄, SF₆, or NF₃; or O₂ can beused as appropriate. Further, an inert gas may be added to the etchinggas. As the inert gas element which is added, one kind of element or aplurality of kinds of elements selected from He, Ne, Ar, Kr, or Xe canbe used.

A conductive film is formed so as to cover the opening portion, and theconductive film is etched to have a desired shape, so that wirings 185 ato 185 i which are electrically connected to part of a source region ora drain region, or a gate electrode are formed. Alternatively, thewirings 185 a to 185 i may be formed by forming a conductive layer asselected at a predetermined position by a droplet discharge method, aprinting method, an electrolytic plating method, or the like.Alternatively, a reflow method or a damascene method may be used. Thewirings 185 a to 185 i are formed using a metal such as Ag, Au, Cu, Ni,Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Zr, or Ba; Si; Ge; or analloy or metal nitride thereof. Alternatively, a stacked-layer structureof any of these materials may be used. In this embodiment mode, a 60nm-thick titanium (Ti) film, a 40 nm-titanium nitride film, a 700nm-thick aluminum film, and a 200 nm-thick titanium (Ti) film arestacked and processed to have a desired shape (see FIG. 6B).

Through the above-described process, a semiconductor device iscompleted, which includes transistors 190 and 191 using semiconductorlayers 151 and 152 as active layers, respectively, and transistors 192and 193 using the single-crystal semiconductor layers 161 and 162 havingcompressive strain as active layers, respectively, over the samesubstrate (see FIG. 6C).

FIGS. 1A and 1B show an example of a semiconductor device which isformed in accordance with this embodiment mode. FIG. 1A is a plan viewof a semiconductor device of the present invention, and FIG. 1B is across-sectional view taken along X-Y in FIG. 1A.

As shown in FIGS. 1A and 1B, a first circuit group 1201 and a secondcircuit group 1202 are formed over the same base substrate 101. Thefirst circuit group 1201 is formed using the transistors 190 and 191which are formed using single-crystal semiconductor layers. The secondcircuit group 1202 is formed using the transistors 192 and 193 which areformed using single-crystal semiconductor layers having compressivestrain.

Embodiment Mode 2

In this embodiment mode, an example of a semiconductor device having adisplay function, to which the present invention is applied, isdescribed with reference to FIGS. 7A and 7B.

FIG. 7A shows an active matrix display device. A pixel portion 1002where a plurality of pixel circuits are arranged in matrix, a datadriver 1003, and a scan driver 1004 are formed over a base substrate1001. Further, a top surface of the base substrate 1001 is hermeticallysealed with a counter substrate (a sealing substrate) 1005. A controlsignal, an image signal, and driving power which are necessary fordriving a display device are supplied from outside through a flexibleprinted circuit (FPC) 1006. In addition, FIG. 7B is a cross-sectionalview taken along A-B in FIG. 7A.

FIG. 7B shows a cross section of an active matrix display device when apixel portion is formed using an electroluminescence (EL) element.

The data driver 1003 and the scan driver 1004 each perform processingfor inputting an image signal supplied from outside to each pixel inaccordance with a control signal supplied from outside, and the datadriver 1003 and the scan driver 1004 each needs relatively high-speedoperations in a display device.

In accordance with the present invention, the data driver 1003 and thescan driver 1004 are formed by using transistors 350 and 351 which areformed by using the single-crystal semiconductor layers, which areformed over the base substrate 1001 through the above-described process,as active layers. The transistors 350 and 351 have sufficient capabilityfor driving the data driver 1003 and the scan driver 1004.

Note that when a display device is manufactured by applying the presentinvention, a light-transmitting substrate formed using glass, plastic,or the like is preferably used as the base substrate 1001. Needless tosay, a material which can withstand the heat treatment through theabove-described step should be selected.

Meanwhile, in the pixel portion 1002, images are displayed when currentis supplied to the EL element provided for each pixel and the EL elementemits light. Therefore, a transistor controlling supply of current tothe EL element needs sufficient drive capability.

In accordance with the present invention, the pixel portion 1002 isformed by using a transistor 352 which is formed by using thesingle-crystal semiconductor layer having compressive strain, which isformed over the base substrate 1001 through the above-described process,as an active layer. In FIG. 7B, a p-channel transistor is used as thetransistor 352. This is because supply of current to the EL element iscontinuously performed during a display period, that is, current iscontinuously supplied to the transistor, so that hot carrierdeterioration or the like is concerned when an n-channel transistor isused. Thus, compressive strain is applied to the active layer of thep-channel transistor 352 included in the pixel portion, and mobility ofholes is improved. Therefore, the p-channel transistor 352 cansufficiently supply current to the EL element even when the channelwidth is decreased.

As a subordinate effect, with improvement in mobility of the holes ofthe p-channel transistor, the arrangement area of the transistor 352 inthe pixel portion can be relatively decreased and the aperture ratio (aratio of a region which contributes to light emission to the whole areaof the pixel portion) can be improved.

Polarities of transistors which lead improvement in mobility aredifferent between the case where tensile strain is applied to asemiconductor layer and the case where compressive strain is applied toa semiconductor layer. Specifically, in the case where tensile strain isapplied to a semiconductor layer, electron mobility is improved in ann-channel transistor, and in the case where compressive strain isapplied to a semiconductor layer, hole mobility is improved in ap-channel transistor. In the semiconductor device of the presentinvention, in accordance with each characteristics of circuit groups,which semiconductor layer to be used to form a transistor for formingthe circuit may be selected as appropriate.

Note that although a scan driver and a data driver are illustrated ascircuits provided around the pixel portion in this embodiment mode,another logic circuit may be formed at the same time.

Subsequently, a specific structure of the pixel portion is describedwith reference to FIG. 7B.

A first electrode layer 320 serving as a pixel electrode layer is formedto be in contact with an electrode of the transistor 352. When light isemitted from the base substrate 1001 side, the first electrode layer 320can be formed using a light-transmitting conductive material such asindium tin oxide (ITO), indium tin oxide containing silicon oxide(ITSO), indium zinc oxide (IZO) containing zinc oxide (ZnO), zinc oxide,ZnO doped with gallium (Ga), tin oxide (SnO₂), indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, or indium tin oxide containing titaniumoxide.

In addition, even in the case of a material which does not havelight-transmitting properties, such as a metal film, when the filmthickness is made extremely thin (preferably approximately 5 to 30 nm)so that light can be transmitted, light can be emitted through the firstelectrode layer 320. As a metal thin film which can be used for thefirst electrode layer 320, a conductive film formed using titanium,tungsten, nickel, gold, platinum, silver, aluminum, magnesium, calcium,lithium, zinc, or alloy thereof, or a film formed using a compoundmaterial containing any of the above-described elements as a maincomponent, such as titanium nitride or tungsten nitride can be used.

The connection structure of the first electrode layer 320 is not limitedto that described in this embodiment mode as long as the first electrodelayer 320 is electrically connected to a source electrode or drainelectrode of the transistor 352. Alternatively, a structure may beemployed in which an insulating layer serving as an interlayerinsulating layer is formed over a source electrode or a drain electrodeand is electrically connected to the first electrode layer 320 by awiring layer. In the case where light is emitted in a direction oppositeto the base substrate 1001 (the case where a top-emission display panelis manufactured), a metal material such as gold, silver, copper,tungsten, or aluminum can be used because the first electrode layer 320does not need light-transmitting properties.

Further, an insulating layer 321 (also referred to as a partition) isformed as selected. The insulating layer 321 is formed so as to have anopening portion over the first electrode layer 320. In this embodimentmode, after the insulating layer 321 is formed over the entire surface,the insulating layer 321 is processed by being etched by a mask such asa resist. In the case of forming the insulating layer 321 by a dropletdischarge method, a printing method, or the like, in which theinsulating layer 321 can be directly formed as selected, processing byetching is not necessarily needed.

The insulating layer 321 can be formed using an inorganic insulatingmaterial such as silicon oxide, silicon nitride, silicon oxynitride,aluminum oxide, aluminum nitride, or aluminum oxynitride; an acrylicacid, a methacrylic acid, or a derivative thereof; a heat-resistant highmolecule such as polyimide, aromatic polyamide, or polybenzimidazole; ora siloxane resin material. The insulating layer 321 preferably has ashape in which a radius of curvature changes continuously becausecoverage thereof with a light-emitting layer 322 and a second electrodelayer 323 which are formed thereover is improved.

As the light-emitting layer 322, materials emitting light of red (R),green (G), and blue (B) are formed as selected by an evaporation methodor the like using evaporation masks. Alternatively, the materialsemitting light of red (R), green (G), and blue (B) can be formed by adroplet discharge method. Further alternatively, a laser transfer methodmay be used in which a substrate where the materials of respectivecolors are uniformly evaporated is prepared and provided so as to facewith the base substrate 1001, and a light-emitting material istransferred to a desired position by laser irradiation or the like fromthe rear surface. When a droplet discharge method or a laser transfermethod is used, the light-emitting material can be formed as selected ata desired position without using the evaporation masks

A second electrode layer 323 is formed over the light-emitting layer322, and the pixel portion is sealed with the counter substrate (sealingsubstrate) 1005. Therefore, a display device is completed.

Although not particularly shown, it is effective for improvement inreliability of a light-emitting element to provide a passivation film soas to cover the second electrode layer 323.

A passivation film which is provided when a display device is formed mayhave a single-layer structure or a stacked-layer structure. Thepassivation film is formed using an insulating film containing siliconnitride, silicon oxide, silicon oxynitride, silicon nitride oxide,aluminum nitride AlN), aluminum oxynitride, aluminum nitride oxidecontaining more nitrogen than oxygen, aluminum oxide, diamond-likecarbon, or nitrogen-containing carbon, and the insulating film can havea single-layer structure or a stacked-layer structure. For example, astacked-layer of a carbon-containing nitrogen film and a silicon nitridefilm or an organic material can be used, or a stacked-layer of a highmolecular such as a styrene polymer may be used. Alternatively, asiloxane material (inorganic siloxane or organic siloxane) may be used.

In that case, it is preferable to use a film having favorable coverageas the passivation film, and it is effective to use a carbon film,particularly, a DLC film as the passivation film. Since a DLC film canbe formed in the range from room temperature to 100° C., it can also beformed easily over an electroluminescent layer with low heat resistance.A DLC film has a high blocking effect against oxygen, and oxidization ofthe electroluminescent layer can be suppressed. Accordingly, a problemsuch as oxidation of the electroluminescent layer during a sealing stepwhich is subsequently performed can be solved.

A space between the base substrate (insulating substrate) 1001 and thecounter substrate (sealing substrate) 1005 is filled with a filler andcan be sealed with a sealant. A dripping method can be used for fillingthe space with the filler. Instead of the filler, the space may befilled with an inert gas such as nitrogen. in addition, when a dryingagent is provided in the display device, deterioration due to moisturein the light-emitting element can be prevented.

Note that the case where a light-emitting element and a liquid crystalelement are sealed with a glass substrate is described in thisembodiment mode. Sealing treatment corresponds to treatment forprotecting a light-emitting element from moisture, and any of thefollowing methods is used: a method of mechanically sealing with a covermaterial, a method of sealing with a thermosetting resin or anultraviolet curable resin, and a method of sealing with a thin filmhaving high barrier capability, which is formed using metal oxide,nitride, or the like. As a cover material, glass, ceramics, plastic, ormetal can be used, and in the case where light is emitted on the covermaterial side, the cover material should have light-transmittingproperties. In addition, the cover material and the substrate providedwith the light-emitting element are attached with a sealant such as athermosetting resin or an ultraviolet curable resin, and the resin iscured by heat treatment or ultraviolet irradiation treatment to form ahermetical space. It is effective to provide an absorbent materialtypified by barium oxide in the hermetical space. The absorbent materialmay be provided to be in contact with the sealant, or may be providedover a partition or at a peripheral portion so as not to impede lightfrom the light-emitting element. Further, the space between the covermaterial and the substrate provided with the light-emitting element canbe filled with a thermosetting resin or an ultraviolet curable resin. Inthis case, it is effective to add an absorbent material typified bybarium oxide in the thermosetting resin or the ultraviolet curableresin.

Note that although the example where an EL element is used for a pixelportion as an example of a display device is described in thisembodiment mode, the present invention does not limit the type of adisplay device. As described in this embodiment mode, also in a displaydevice using a liquid crystal element for a pixel portion, a transistorformed using a single-crystal semiconductor layer and a transistorformed using a single-crystal semiconductor layer to which compressivestrain is applied may be used for the peripheral circuit portion and thepixel portion, respectively, as appropriate.

Further, instead of the transistor formed using a single-crystalsemiconductor layer, which is used for the peripheral circuit, atransistor formed using a single-crystal semiconductor layer to whichtensile strain is applied may be used.

This embodiment mode can be combined with Embodiment Mode 1 asappropriate.

Embodiment Mode 3

In the semiconductor device of the present invention, a thinsingle-crystal semiconductor layer 150 and a thick single-crystalsemiconductor layer 160 are formed over the base substrate 101 by beingattached thereto; however, there is the case where part of a separationplane due to an ion irradiation step is left remaining on an outermostsurface of each single-crystal semiconductor layer. Since the separationplane is a region which is in contact with a region where the weakenedlayer (the separation layer) is formed by hydrogen ion irradiation, theseparation plane has flatness inferior to the surface of a normalsingle-crystal semiconductor layer. Therefore, it is necessary toimprove the surface condition of the separation plane in order toprevent defects in subsequent steps.

As a typical method for removing such a separation plane, there issurface polishing by chemical mechanical polishing (CMP) as well as amethod in which the separation plane is oxidized by surface oxidationand then the oxidized layer is removed in a reducing atmosphere, forexample. In the present invention, the surface may be improved by anyone of methods.

When the single-crystal semiconductor layers with different thicknesses,which are formed through the above steps, are used, a semiconductordevice having low power consumption and high reliability, which is onemode of the present invention, can be manufactured.

This embodiment mode can be combined with Embodiment Mode 1 or 2 asappropriate.

Embodiment Mode 4

When the present invention is applied, a semiconductor device having avariety of display functions can be manufactured. That is, the presentinvention can be applied to a variety of electronic devices in which asemiconductor device having such display functions is incorporated in adisplay portion. In this embodiment mode, examples of electronic deviceswhich include a semiconductor device having a display function, whichaims at high performance and high reliability, are shown.

Examples of electronic devices of the present invention are a televisionset. (also simply referred to as a television or a television receiver),a camera such as a digital camera or a digital video camera, a portablephone device (also simply referred to as a portable phone), a portableinformation terminal such as a PDA, a portable game machine, a computermonitor, a computer, an audio reproducing device such as a car audiocomponent, an image reproducing device provided with a recording medium,such as a home-use game machine (e.g., a device which reproduces adigital versatile disc (DVD)), and the like. Specific examples thereofare described with reference to FIGS. 8A to 8E.

A portable information terminal shown in FIG. 8A includes a main body9201, a display portion 9202, and the like. The semiconductor device ofthe present invention can be applied to the display portion 9202.

A digital video camera shown in FIG. 8B includes a display portion 9701,a display portion 9702, and the like. The semiconductor device of thepresent invention can be applied to the display portion 9701.

A mobile phone shown in FIG. 8C includes a main body 9101, a displayportion 9102, and the like. The semiconductor device of the presentinvention can be applied to the display portion 9102.

A portable television set shown in FIG. SD includes a main body 9301, adisplay portion 9302, and the like. The semiconductor device of thepresent invention can be applied to the display portion 9302. Further,the semiconductor device of the present invention can be applied to awide range of television sets ranging from a small-sized television setmounted on a portable terminal such as a mobile phone, a medium-sizedtelevision set which can be carried, to a large-sized (e.g., 40-inch orlarger) television set.

A portable computer shown in FIG. 8E includes a main body 9401, adisplay portion 9402, and the like. The semiconductor device of thepresent invention can be applied to the display portion 9402.

This embodiment mode can be combined with Embodiment Modes 1 to 3 asappropriate.

Embodiment Mode 5

A television set can be completed using a semiconductor device includinga display element formed by the present invention. An example of atelevision set which has high performance and high reliability isdescribed.

FIG. 9 is a block diagram showing a main structure of a television set(a liquid crystal television set, an EL television set, or the like). Adisplay panel can be formed in any mode as follows: a mode in which aTFT is formed, and a pixel region 1901 and a scan line driver circuit1903 are formed over the same substrate, and a signal line drivercircuit 1902 is separately mounted as a driver IC; a mode in which thepixel region 1901, the signal line driver circuit 1902, and the scanline driver circuit 1903 are formed over the same substrate; and thelike.

As structures of other external circuits, a video signal amplifiercircuit 1905 amplifying a video signal among signals received by a tuner1904, a video signal processing circuit 1906 converting signals outputfrom the video signal amplifier circuit 1905 into chrominance signalscorresponding to respective colors of red, green, and blue, a controlcircuit 1907 for converting the video signal into a signal which meetsinput specifications of a driver IC, and the like are provided on aninput side of the video signal. The control circuit 1907 outputs signalsto both a scan line side and a signal line side. In the case of digitaldriving, a signal dividing circuit 1908 may be provided on the signalline side and an input digital signal may be divided into m pieces to besupplied.

Among the signals received by the tuner 1904, an audio signal istransmitted to an audio signal amplifier circuit 1909, and outputthereof is supplied to a speaker 1913 through an audio signal processingcircuit 1910. A control circuit 1911 receives control information on areceiving station (receiving frequency) or sound volume from an inputportion 1912 and transmits the signal to the tuner 1904 or the audiosignal processing circuit 1910.

A television set can be completed when a display module is incorporatedin a housing, as shown in FIGS. 10A and 10B. A display panel as shown inFIGS. 7A and 7B, on which an FPC is mounted, is also referred to as anEL display module generally. Thus, when an EL display module as shown inFIGS. 7A and 7B is used, an EL television set can be completed. When aliquid crystal display module is used, a liquid crystal television setcan be completed. A main screen 2003 is formed using the display module,and a speaker portion 2009, operation switches, and the like areprovided as its accessory equipment. Thus, a television set can becompleted by the present invention.

In addition, reflected incident light from outside may be blocked byusing a retardation plate or a polarizing plate. In the case of atop-emission semiconductor device, an insulating layer serving as apartition may be colored to be used as a black matrix. This partitioncan also be formed by a droplet discharge method or the like. Carbonblack or the like may be mixed into a black resin of a pigment materialor a resin material such as polyimide, or a laminate thereof may beused. By a droplet discharge method, different materials may bedischarged to the same region plural times to form the partition. A λ/4plate or a λ/2 plate may be used as the retardation plate and may bedesigned so that light can be controlled. As the structure, alight-emitting element, a sealing substrate (a sealant), the retardationplates (a λ/4 plate and a λ/2 plate), and the polarizing plate aresequentially formed in that order from the TFT element substrate side,and light emitted from the light-emitting element is transmittedtherethrough and is emitted outside from the polarizing plate side. Theretardation plate or the polarizing plate may be provided on a side towhich light is emitted or can be provided on both sides in the case of adual-emission semiconductor device in which light is emitted across theboth sides. In addition, an antireflective film may be provided on theouter side of the polarizing plate. Thus, higher-definition and preciseimages can be displayed.

As shown in FIG. 10A, a display panel 2002 using a display element isincorporated in a housing 2001. When a receiver 2005 is used, includingreception of general TV broadcast, communication of information can alsobe performed in one way (from a transmitter to a receiver) or in twoways (between a transmitter and a receiver or between receivers) byconnection to a wired or wireless communication network through a modem2004. The television set can be operated by switches incorporated in thehousing or by a remote controller 2006 separated from the main body. Adisplay portion 2007 displaying information to be output may also beprovided in this remote controller.

In addition, in the television set, a structure for displaying achannel, sound volume, or the like may be added by forming a subscreen2008 with a second display panel in addition to the main screen 2003. Inthis structure, the main screen 2003 may be formed using an EL displaypanel superior in the viewing angle, and the subscreen 2008 may beformed using a liquid crystal display panel capable of displaying imageswith low power consumption. Alternatively, in order to prioritize lowpower consumption, a structure in which the main screen 2003 is formedusing a liquid crystal display panel, the subscreen 2008 is formed usingan EL display panel, and the subscreen 2008 can flash on and off may beemployed. When the present invention is used, a display device which hashigh performance and high reliability can be manufactured with highproductivity even when such a large substrate and many TFTs andelectronic components are used.

FIG. 10B shows a television set having a large display portion, forexample, 20 to 80-inch display portion, which includes a housing 2010, adisplay portion 2011, a remote controller 2012 which is an operationportion, a speaker portion 2013, and the like. The present invention isapplied to manufacture of the display portion 2011. The television setshown in FIG. 10B is a wall-hanging type and does not need a wide space.

Needless to say, the present invention is not limited to the televisionset, and can be applied to various uses particularly as a large displaymedium such as an information display board at a train station, anairport, or the like, or an advertisement display board on the street,as well as a monitor of a personal computer.

This embodiment mode can be combined with Embodiment Modes 1 to 4 asappropriate.

This application is based on Japanese Patent Application serial no.2007-173452 filed with Japan Patent Office on Jun. 29, 2007, the entirecontents of which are hereby incorporated by reference.

1. A method for manufacturing a semiconductor device comprising thesteps of: irradiating a single-crystal semiconductor substrate with anion to form a weakened layer inside the single-crystal semiconductorsubstrate; forming a bonding layer over a base substrate; bonding thebonding layer and the single-crystal semiconductor substrate to eachother; separating a single-crystal semiconductor layer from thesingle-crystal semiconductor substrate with the weakened layer used as aseparation surface; and generating heat shrink in the single-crystalsemiconductor layer by heat treatment of the base substrate to generatea compressive strain in the single-crystal semiconductor layer.
 2. Amethod for manufacturing a semiconductor device comprising the steps of:irradiating a single-crystal semiconductor substrate with an ion to forma weakened layer inside the single-crystal semiconductor substrate;forming a bonding layer over the single-crystal semiconductor substrate;bonding the bonding layer and a base substrate to each other; separatinga single-crystal semiconductor layer from the single-crystalsemiconductor substrate with the weakened layer used as a separationsurface; and generating heat shrink in the single-crystal semiconductorlayer by heat treatment of the base substrate to generate a compressivestrain in the single-crystal semiconductor layer.
 3. The method formanufacturing a semiconductor device according to claim 1, furthercomprising: forming a single-crystal semiconductor layer having atensile strain over the base substrate after generating the heat shrinkin the single-crystal semiconductor layer.
 4. The method formanufacturing a semiconductor device according to claim 2, furthercomprising: forming a single-crystal semiconductor layer having atensile strain over the base substrate after generating the heat shrinkin the single-crystal semiconductor layer.
 5. The method formanufacturing a semiconductor device according to claim 1, wherein thebonding layer is a silicon oxide film formed using an organic silane gasby a chemical vapor deposition method.
 6. The method for manufacturing asemiconductor device according to claim 2, wherein the bonding layer isa silicon oxide film formed using an organic silane gas by a chemicalvapor deposition method.
 7. The method for manufacturing a semiconductordevice according to claim 1, wherein the base substrate is a substratehaving an insulating surface.
 8. The method for manufacturing asemiconductor device according to claim 2, wherein the base substrate isa substrate having an insulating surface.
 9. The method formanufacturing a semiconductor device according to claim 1, wherein thebase substrate is a glass substrate.
 10. The method for manufacturing asemiconductor device according to claim 2, wherein the base substrate isa glass substrate.